TSM3911D Search Results

p-channel mosfet

Abstract: Dual P-Channel MOSFET P-Channel MOSFET code L 1A ultra low igss pA TSM3911D
Contextual Info: TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5, Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 ID (A) 140 @ VGS = -4.5V -2.2 200 @ VGS = -2.5V -1.8 300 @ VGS = -1.8V -1.5 Features Block Diagram

TSM3911D

Contextual Info: TSM3911D 20V Dual P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5, Source 1 3. Gate 2 4. Drain 2 -20 ID (A) 140 @ VGS = -4.5V -2.2 200 @ VGS = -2.5V -1.8 300 @ VGS = -1.8V -1.5 Features Block Diagram

Contextual Info: TSM3911D 20V Dual P-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5, Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS V RDS(on)(m) -20 ID (A) 140 @ VGS = -4.5V -2.2 200 @ VGS = -2.5V -1.8 300 @ VGS = -1.8V -1.5 Features Block Diagram

Contextual Info: TSM3911D 20V Dual P-Channel MOSFET SOT-26 Key Parameter Performance Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 Parameter Value Unit VDS -20 V RDS on (max) VGS = -4.5V 140 VGS = -2.5V 200 VGS = -1.8V 300 Qg Features mΩ

TSM3911D

Abstract: lS105
Contextual Info: TAIWAN S SEMICONDUCTOR pb RoHS TSM3911D 20V Dual P-Channel MOSFET CO M PLIANCE PRODUCT SUMMARY SO T-26 854 Pin D efin itio n : 1.Gate1 2. Source 2 3. Gate 2 6. Drain 1 5; Source 1 4. Drain 2 RD S(on)(m Q ) I d (A ) 140 @ Vcs = -4 .5 V -2.2 200 @ V«s - -2.5V