TSM15 Search Results

Contextual Info: TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 12 @ VGS =10V 7.8 17 @ VGS =4.5V 7 Block Diagram

TSM157PW1B

Abstract: filter for GPS
Contextual Info: TENTATIVE SAW Filter for GPS MODEL TSM157PW1B 1. ELECTRICAL CHARACTERISTICS : Ta = -30 to +85 °C ITEM Nominal I/O Impedance Nominal Center Freq. : f0 Pass Band Insertion Loss Ripple at Pass Band V.S.W.R. at Pass Band Attenuation 824 to 915 1650 to 1700 1710 to 1910

TSM15N50

Contextual Info: TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 500 0.44 @ VGS =10V ID (A) 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

Contextual Info: TSM15N50CN 500V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(mΩ) ID (A) 500 0.44 @ VGS =10V 14.2 General Description The TSM15N50CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

Contextual Info: TSM15 Series Medical Grade 15W Desktop Power Adapters TRUMPower FEATURES • • • • • • • IEC 320/C14 Inlet Class I with 2 MOPP LED Power Indicator 5V to 36V Output Voltages 3,000 Meters Operating Altitude 0.3W No Load Power Consumption UL, cUL, TUV, PSE, FCC, CB & CE Approvals

Contextual Info: TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 500 0.44 @ VGS =10V ID (A) 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS

Contextual Info: TENTATIVE SAW Filter for GPS MODEL TSM157SW3B ES-2 1. ELECTRICAL CHARACTERISTICS : Ta = -30 to +85 °C ITEM Nominal I/O Impedance Nominal Center Freq. : f0 Pass Band Insertion Loss Ripple at Pass Band V.S.W.R. at Pass Band Attenuation 824 to 915 1650 to 1700

Contextual Info: TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 Key Parameter Performance Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Parameter Value Unit VDS 30 V RDS on (max) VGS = 10V 12 VGS = 4.5V 17 Qg Features mΩ 3.6 nC

Contextual Info: TSM15N15 150V N-Channel Power MOSFET TO-252 DPAK PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS (V) RDS(on)(mΩ) ID (A) 150 75 @ VGS =10V 12 Block Diagram Advanced Trench Technology Low RDS(ON) 75mΩ (Max.) Low gate charge typical @ 20.9nC (Typ.)

Contextual Info: TENTATIVE SAW Filter for GPS MODEL TSM157PW2B ES-2 1. ELECTRICAL CHARACTERISTICS : Ta = -30 to +85 °C ITEM Nominal I/O Impedance Nominal Center Freq. : f0 Pass Band Insertion Loss Ripple at Pass Band V.S.W.R. at Pass Band Attenuation 824 to 915 1650 to 1700

cr18a

Abstract: cr88a HC18U cr148 CR64U CR26A hc-18 crystal cr30a hc11a CR57A
Contextual Info: EUROQUARTZ GENERAL PRODUCT SPECIFICATION CRYSTALS - CR SPECIFICATIONS Telephone: +44 0 1460 230000 Fax: +44 (0)1460 230001 Email: sales@euroquartz.co.uk Web: CR SPECIFICATION www.euroquartz.co.uk QUARTZ CRYSTALS These tables lists CR type crystals. The CR number applied to

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?