TSHA5500 Search Results
TSHA5500 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSHA5500 | Vishay Semiconductors | Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH EFF. 870NM 5MM 2 | Original | 5 | |||
| TSHA5500 | Vishay Telefunken | GaAlAs Infrared Emitting Diodes in Deg 5 mm (T-1 3-4) Package | Original | 89.79KB | 6 |
TSHA5500 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TSHA5500Contextual Info: TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm |
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tsha5500tsha5501tsha5502tsha5503+4 | |
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Contextual Info: TSHA5500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° |
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tsha55002002/95/ec2002/96/ec11-mar-11 | |
8015 j
Abstract: TSHA5500
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tsha55002002/95/ec2002/96/ec18-jul-08+1 | |
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Contextual Info: TSHA5500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° |
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tsha55002002/95/ec2002/96/ec2011/65/eu+2 | |
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Contextual Info: TSHA5500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° |
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tsha55002002/95/ec2002/96/ec11-mar-11 | |
tsha5503
Abstract: TSHA5502 diode SR 09 TSHA 5502 TSHA5203 TSHA550 TSHA5500 TSHA5501
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tsha5500tsha5501tsha5502tsha5503+7 | |
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Contextual Info: TSHA5500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° |
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tsha55002002/95/ec2002/96/ec2011/65/eu+1 | |
CQX48B
Abstract: TLH04400 TLRG542
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OCR Scan |
tlbr5410tldr4400tldr4900tldr5400+9 | |
TSHA550
Abstract: TSHA5500 TSHA5501 TSHA5502 TSHA5503
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tsha550tsha5500tsha5501tsha5502+1 | |
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Contextual Info: TSHA550. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm T–1¾ Package Description 94 8390 The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs |
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tsha550d-7402520-may-99 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90f8548sdp8600-00195f5325sdp8371-001+16 | |
TSHA3400
Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
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OCR Scan |
sep8505/8525sep8506/8526sep8405/8425sep8406/8426+16 | |
TSHA 5502
Abstract: Transistor 5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 TSHA5503
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tsha550d-7402520-may-99tsha 5502+5 | |
c1g smd
Abstract: bpv10nf TEMD2100
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cqy36ncqy37ntsus4300tsus4400+9 | |
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
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Contextual Info: TSHA550. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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tsha5502002/95/ec2002/96/ecd-74025+1 | |
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Contextual Info: Temic S e m i c o n d u c t o r s IrDA-Compatible Data Transmission TELEFUNKEN Semiconductors 04.96 Temic S e m i c o n d u c t o r s Table o f Contents Paving the Way to a Wireless Information |
OCR Scan |
d-74025 | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-sep-08diode sr 360iec 6247160825-1+7 | |
TSHA 5502
Abstract: TSHA5502 Transistor 5503 TSHA550 TSHA5500 TSHA5501 TSHA5503
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tsha550d-7402520-may-99tsha 5502+5 | |
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Contextual Info: TSHA550. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about |
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tsha55018-jul-08 | |
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Contextual Info: TSHA550. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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tsha5502002/95/ec2002/96/ec08-apr-05 | |
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Contextual Info: T em ic TSHA550 S e m i c o n d u c t o r s GaAIAs Infrared Emitting Diodes in 05mm T -l^ Package Description The TSHA550. series are high efficiency infrar ting diodes in GaAIAs on GaAIAs technology, m a clear, untinted plastic package. In comparison with the standard GaAs on GaAs |
OCR Scan |
tsha55015-jut-96i5-jul-9615-jul-96 | |
TSUS3400
Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
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vmn-sg2123-1010tsus3400vcnl4000vishay vslb3940 datasheet+7 | |
APPLICATION CIRCUIT OF TSAL4400
Abstract: TSAL6400 TSAL6100 TSHF5200 TSTS7102 CQX48B CQY36N CQY37N tsta7500 TSAL4400
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conta80089tshf5400tsmf1000tsmf3700+16 | |