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    onsemi MTP15N06VL

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    TP15N06

    Abstract: P15N06V TP15N06V 15N06VL
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TP15N06VL TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea prod u ct a bo u t o n e -h a lf th a t ot sta n d a rd M O S FE Ts. This


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    Contextual Info: MOTOROLA Order this document by TP15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP15N 06VL TMOS V™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This


    OCR Scan     		MTP15N06VL/D TP15N 21A-06 PDF