TN3012L Search Results

diode 27c

Abstract: TN3012L b0704
Contextual Info: TN3012L Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary V BR DSS Min (V) rDS(on) Max (W) 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V VGS(th) (V) ID (A) 0.8 to 3 0.18 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids,

TN3012L

Abstract: 70206
Contextual Info: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

Contextual Info: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M in (v ) fDSion) Max (Q ) 12 0 V q s 300 20 a Vqs = 4.5 V Id (A) 0.8 to 3 0.18 BENEFITS FEATURES • • • • • VGS(.h)(V) = 1OV APPLICATIONS Low On-Resistance: 9 Q • Low Offset Voltage

Contextual Info: Tem ic TN3012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) r DS<on) M a x (Q ) ^GSrth) (V) I d (A) 0.8 to 3 0.18 12@ V GS= 1 0 V 300 20 @ VGS * 4.5 V Features Benefits • • • • • •

to-226aa

Abstract: TN3012L
Contextual Info: TN3012L N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0.8 to 3 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

TN3012L

Contextual Info: TN3012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0 8 to 3 0.8 0 18 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

TN3012L

Contextual Info: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

TN3012L

Contextual Info: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

Contextual Info: T e m ic TN3012L_ Siliconix N-Channel Enhancement-Mode MOSFET Product Summary V BR DSS Min (V) Max (£2) 12 @ VGS = 10 V 20 @ VGs = 4.5 V rDS(on) 300 Features • • • • • Low On-Resistance: 9 Q Secondary Breakdown Free: 320 V Low Power/Voltage Driven

TN3012L

Contextual Info: TN3012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0.8 to 3 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

One-chip telephone IC

Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
Contextual Info: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2