TIP117F Search Results

TIP112F

Abstract: TIP117F
Contextual Info: SEMICONDUCTOR TIP117F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C P E B High DC Current Gain. VCE=-4V, IC=-1A. G : hFE=1000 Min. , Low Collector-Emitter Saturation Voltage.

Contextual Info: SEM ICONDUCTOR TIP117F TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R M O N OLITH IC C O N ST R U C T IO N WITH BUILT IN BASE-EM ITTER SHU N T RESISTORS IND U STRIA L USE. SJ FEA T U RE S DIM MILLIMETERS A 10.0±0.3 15.0 J.0.3 • H igh DC C urrent Gain.

TIP117F

Contextual Info: SEMICONDUCTOR TIP117F MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 TIP117F 216 3 2002. 7. 11 4 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name TIP117F TIP117F 3 hFE Grade - - 4 Lot No.

Contextual Info: SEMICONDUCTOR TIP117F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C P E B ・High DC Current Gain. G : hFE=1000 Min. , ＠VCE=-4V, IC=-1A. ・Low Collector-Emitter Saturation Voltage.

PNP 100V 2A

Abstract: TIP112F TIP117F
Contextual Info: SEMICONDUCTOR TIP117F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM A B C D E F G H R J K L M V N O P Q R H S T U V P F U FEATURES E S G : hFE=1000 Min. , B High DC Current Gain.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

TIP112F

Abstract: TIP117F
Contextual Info: SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C DIM A B C D E F G H R J K L M V N O P Q R H S T U V P F U FEATURES E S G : hFE=1000 Min. , B High DC Current Gain.

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

TIP112F

Abstract: TIP117F
Contextual Info: SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C P E B High DC Current Gain. VCE=4V, IC=1A. G : hFE=1000 Min. , Low Collector-Emitter Saturation Voltage.

TIP112F

Contextual Info: SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C P E B ・High DC Current Gain. G : hFE=1000 Min. , ＠VCE=4V, IC=1A. ・Low Collector-Emitter Saturation Voltage.