THC93 Search Results

Contextual Info: THC930 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

THC697

Abstract: THC699 THC718 THC760 THC760A THC915 THC916 THC917 THC918 THC929
Contextual Info: BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH ’ Device Types ELECTRICAL CHARACTERISTICS al TA = 25°C DC Current Gain 'cB O Device Type Max. mA THC697 THC699 THC718 THC760 THC760A THC915 THC916 THC917 THC918 THC929 THC929A THC93Û THC930A THC956 THC981

Contextual Info: SPRAGUE/ 1 : SPRAGUE/SEMICOND 8514019 SPRAGUE! GROUP T3 D • SEMICONDS / ICS ÖS13Ö50 0003550 =5 T^âl^O 93D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors T H ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type DC Current Gain

THC697

Abstract: THC699 THC718 THC760 THC760A THC915 THC916 THC917
Contextual Info: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 S P R A GU E. “13 5 • 0504330 0003550 S E M I C O N D S / ICS 3 ■ AL 6R l'Alto 93 D 0 3 5 5 8 P BIPOLAR TRANSISTOR CHIPS NPN Transistors ‘TH ’ Device Types E LE C T R IC A L CH ARACTERISTICS at TA = 25°C