TD15N06 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TD15N06VL TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0-085 OHM N-Channel Enhancement-Mode Silicon Gate TM O S V i s a new te ch n o lo g y d esig n ed to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFETs. T h is

Contextual Info: rzT SGS-THOMSON Ä 7# » œ s iL IC T r a ie S S T D 1 5 N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS on S TD15N06 60 V < 0.1 n •d % 15 A Q . TYPICAL RDS(on) = 0.075 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: MOTOROLA O rder this docum ent by M TD15N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD15N06VL TMOS V™ Power Field Effect Transistor DPAK for S urface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.085 OHM N-Channel Enhancement-Mode Silicon Gate