TC74ACOO Search Results

189 itt

Contextual Info: PRODUCT GUIDE TC74AC/ACT SERIES PRODUCT GUIDE PIN PAGE TC74ACOO QUAD 2 -IN P U T NAND GATE FUNC TION 14 59 TC74ACT00 QUAD 2-IN P U T NAND GATE 14 62 TC74AC 02 QUAD 2-IN PU T NOR GATE 14 65 TC74ACT02 QUAD 2-IN PU T NOR GATE 14 68 TC74AC04 HEX INVERTER 14 71

Contextual Info: QUAD 2-INPUT NA ND GATE The TC74ACOO is an advanced high speed CMOS 2- INPUT NAND GATE fabricated with silicon gate and double-layer m etal w iring C 2 MOS technology. It achieves the high speed operation sim ilar to equivalent Bipolar Schottky TTL while m aintaining the

TC74ACOOP

Contextual Info: TC74ACOOP/F /FN QUAD 2- IN P U T NAND GA TE The TC74ACOO is an advanced high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate and d o u b le-lay er m etal w iring C‘ MOS technology. It achieves the high speed operation sim ila r to equivalent Bipolar SchoLtky TTL while m aintaining the

74F00

Abstract: TC74AC00P MOS 4015 3D14A-P
Contextual Info: TOSHIBA QUAD INTEGRATED CIRCUIT TECHNICAL DATA 2-IN PU T NAND TC74AC00P GATE T he TC74ACOO is an ad v an ced h igh speed CMOS 2-IN PU T NAND GATE fa b ric a te d w ith silico n g ate and d o u b le -la v e r m e ta l w irin g C* MOS technology. It achieves the h ig h speed o p eratio n s im ila r to

Contextual Info: TOSHIBA r> QUAD INTEGRATED CIRCUIT TC74AC00P T EC H N IC A L DATA 2-INPUT NAND GATE The TC74ACOO is an advanced high speed CMOS 2-INPUT NAND GATE fab ricated with silicon gate and d o u b le -la v e r m etal w iring C* MOS technology. It achieves the high speed operation sim ila r to

TC74ACOOP

Contextual Info: PRECAUTIONS IN HANDLING 8. Precautions in Handling Output Equivalent Circuit 8-1 Electrostatic Discharge CMOS ICs have a very thin gate insulation oxide film. When high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate sometimes

Contextual Info: TOSHIBA TC74AC00 Quad 2-Input NAND Gate FEATURES: • High Speed: tpd = 3.8ns typ. at Vcc = 5V • Low Power Dissipation: Ic c = 4|jA (max.) at Ta = 25°C • High Noise Immunity: Vnih - Vml —28% Vcc (min.) • Symmetrical Output Impedance: II0hI = Iol = 24mA

TC4069 OSCILLATOR

Abstract: TC40HXXX tc4011bp applications MC14500B Industrial Control Unit cmos integrated circuits TC4069 equivalent
Contextual Info: OUTLINE 1. C 2M0S I C F a mi ly 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted