TC59SM Search Results

cc 052

Contextual Info: TO SH IBA THMD51E30B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59SM803BFT DRAMs and PLL/Registers on a printed circuit board.

TC59SM816

Contextual Info: TC59SM816/08/04BFT/BFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

Intel 1103 DRAM

Abstract: D03B intel 1103 ram D018 D019 D032
Contextual Info: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

THMY25E10C70

Contextual Info: TOSHIBA THMY25E10C70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E10C is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808CFT DRAMs and PLL/Registers on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY51E10B70
Contextual Info: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

133M

Abstract: TC59SM816 TC59SM816CFTI-75
Contextual Info: TC59SM816CFTI-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4

Contextual Info: T O S H IB A THLY6480H1 FG-80#-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480H1FG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.

Contextual Info: T O S H IB A THLY6416G1 FG-80,-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6416G1FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circuit board.

Contextual Info: T O S H IB A THMY7280H1EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280H1EG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM716FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY12N11A70,70L,75,75L,80,80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY12N11A is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM708AFT/AFTL DRAMs and an unbuffer on a printed circuit board.

PCI33

Contextual Info: THLY64N11A70,70L,75,75L,80,80L TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY64N11A is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716AFT/AFTL DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THLY641641 FG-80t-80L,-10,-1 OL TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY641641FG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM716FT/FTL DRAMs on a printed circuit board.

THLY12N11C70

Contextual Info: TOSHIBA THLY12N11C70,70L,75,75L,80,80L TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY12N11C is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM816CFT/CFTL DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THMY7216F0EG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THM Y7216F0EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708FT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA T H M Y 2 5 N 1 1B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25N11B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY7216F0EG-75 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216F0EG is a 16,777,216-word by 72 bit synchronous dynamic RAM module consisting of nine TC59SM708FT DRAMs and PLL/Registers on a. printed circuit board.

ra2b

Contextual Info: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THMY25E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY25E11B is a 33,554,432-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM808BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THLY25N01 B70f70Lf75f75Lf80f80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY25N01B is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of eight TC59SM816BFT/BFTL DRAMs on a printed circuit board.

TFBGA60

Abstract: TC59SM816
Contextual Info: TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM

TOSHIBA MG75

Abstract: TC59SM716FT
Contextual Info: TO SH IBA THLY6480X1 M G -7 5 #-75L#-80#-80L TENTATIVE TOSHIBA HYBRID DIGI rAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480X1MG is a 8,388,608-word by 6- -bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circ ait board.

D018

Abstract: D019 D032 D051 THMY7264G0LEG-75 RA1B
Contextual Info: TOSHIBA THMY7264G0LEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264G0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

TC59SM716FT

Contextual Info: TO SH IBA THMY648091 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648091EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.