TC55YK1636AYB Search Results

Contextual Info: TC55YK1636AYB-800,-666,-500 TOSHIBA TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS DDR STATIC RAM DESCRIPTION The TC55YK1636AYB is a 18,874,368-bit synchronous static random access memory SRAM organized as 524,288 words by 36 bits. It is designed for use as a secondary cache in applications