TC559128AJ Search Results

Contextual Info: TOSHIBA TC559128AJ-15/20 MOS DIGITAL INTEGRATED CIRCUIT PRELIMINARY SILICON GATE CMOS 131,072 WORD x 9 BIT CMOS STATIC RAM Description The TC559128AJ is a 1,179,648 bits high speed static random access memory organized as 131,072 words by 9 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high

TC559128AJ-15

Abstract: TC559128AJ-20 TC559128AJ toshiba linear ic book
Contextual Info: TOSHIBA TC559128AJ-15/20 PRELIMINARY S I L I C ON GATE C M O S 1 3 1 , 07 2 W O R D x 9 BI T C M O S STATIC RAM Description The TC559128AJ is a 1,179,648 bits high speed static random access memory organized as 131,072 w ords by 9 bits using CMOS technology, and operated from a single 5 -volt supply. Toshiba’s CMOS technology and advanced circuit form provide high

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit