TB3N60E Search Results
TB3N60E Price and Stock
onsemi
onsemi MTB3N60ET4Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MTB3N60ET4 | 6,000 |
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Get Quote | |||||||
TB3N60E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA Order this document by TB3N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TB3N60E TMOS E-FET High Energy Power FET Motorola Preferred Device D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to |
OCR Scan |
MTB3N60E/D TB3N60E 418B-03 | |
transistor d 965 alContextual Info: MOTOROLA Order this document by TB3N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TB3N60E TMOS E-FET High Energy Power FET Motorola Preferred Device D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to |
OCR Scan |
MTB3N60E/D MTB3N60E 418B-03 transistor d 965 al |