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    TB3N60E Search Results

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    TB3N60E Price and Stock

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    Rochester Electronics LLC MTB3N60ET4

    N-CHANNEL POWER MOSFET
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    DigiKey MTB3N60ET4 Bulk 260
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    • 1000 $1.15
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    onsemi MTB3N60E

    Power Field-Effect Transistor, 3A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics MTB3N60E 550 1
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    • 100 $0.61
    • 1000 $0.50
    • 10000 $0.45
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    onsemi MTB3N60ET4

    Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MTB3N60ET4 700 1
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    • 100 $1.11
    • 1000 $0.92
    • 10000 $0.82
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    TB3N60E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA Order this document by TB3N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TB3N60E TMOS E-FET High Energy Power FET Motorola Preferred Device D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to


    OCR Scan     		MTB3N60E/D TB3N60E 418B-03 PDF

    transistor d 965 al

    Contextual Info: MOTOROLA Order this document by TB3N60E/D SEMICONDUCTOR TECHNICAL DATA Product Preview M TB3N60E TMOS E-FET High Energy Power FET Motorola Preferred Device D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to


    OCR Scan     		MTB3N60E/D MTB3N60E 418B-03 transistor d 965 al PDF