T5401 Search Results
T5401 Datasheets (23)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| T5401 | SGS-Ates | Shortform Data Book 1977/78 | Short Form | 32.66KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401(RANGE:100-200)
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JCET Group | MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMST5401(RANGE:100-300)
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JCET Group | PNP transistor in SOT-323 package with -150 V collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and transition frequency of 100 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CXT5401
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Shenzhen Heketai Electronics Co Ltd | PNP bipolar transistor in SOT-89 package with -160 V collector-base voltage, -150 V collector-emitter voltage, -500 mA collector current, 500 mW power dissipation, and DC current gain up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401
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Shandong Jingdao Microelectronics Co Ltd | MMBT5401 PNP transistor in SOT-23 package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -5 V emitter-base voltage, continuous collector current of -0.6 A, and transition frequency of 300 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401
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Shikues Semiconductor | Original | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401
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AK Semiconductor | PNP transistor in SOT-23 package with collector-base breakdown voltage of -160 V, DC current gain (hFE) ranging from 100 to 300, and maximum collector current of -0.6 A. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CXT5401(RANGE:80-300)
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JCET Group | PNP transistor in SOT-89-3L package with maximum collector current of -0.5 A, collector-emitter voltage of -150 V, collector power dissipation of 0.5 W, and transition frequency up to 300 MHz. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMDT5401(RANGE:100-300)
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JCET Group | Dual PNP transistor in SOT-363 package with 150 V collector-emitter voltage, 200 mA continuous collector current, 100 MHz transition frequency, and DC current gain up to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401
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SLKOR | High Voltage Transistor, VCEO -150Vdc, VCBO -160Vdc, VEBO -6.0Vdc, Ic -500mAdc, PD 225mW, RΘJA 556°C/W, TJ 150°C. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CXT5401
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AK Semiconductor | PNP silicon transistor in SOT-89 package with -150 V collector-emitter voltage, -500 mA collector current, 1.2 W power dissipation, and 100 MHz transition frequency. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AD-MMBT5401-H
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JCET Group | PNP plastic-encapsulated transistor in SOT-23 package, with collector-base voltage of -160 V, collector-emitter voltage of -150 V, continuous collector current of -0.6 A, and power dissipation of 0.3 W, suitable for medium power amplification and switching. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMST5401
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Shenzhen Heketai Electronics Co Ltd | PNP bipolar transistor in SOT-323 surface mount package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and DC current gain from 50 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401
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Microdiode Semiconductor (MDD) | Small Signal Bipolar Transistor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AD-MMBT5401
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JCET Group | PNP transistor in SOT-23 package, rated for -160V collector-base voltage, -150V collector-emitter voltage, with a continuous collector current of -0.6A and power dissipation of 0.3W, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401
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CREATEK Microelectronics | MMBT5401 is a high voltage NPN transistor in SOT-23 package, featuring 160 V collector-base breakdown voltage, 600 mA collector current, and 300 mW power dissipation, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CZT5401
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JCET Group | PNP transistor in SOT-223 package with collector-base voltage of -160 V, collector current of -600 mA, DC current gain up to 300, transition frequency up to 300 MHz, and power dissipation of 1 W. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401
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Shenzhen Heketai Electronics Co Ltd | PNP bipolar transistor in SOT-23 package, with -160 V collector-base voltage, -150 V collector-emitter voltage, -600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401(RANGE:200-300)
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JCET Group | MMBT5401 is a PNP transistor in SOT-23 package, rated for -150 V VCEO, -0.6 A collector current, with hFE ranging from 100 to 300, suitable for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MMBT5401-G(RANGE:200-300)
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JCET Group | MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
T5401 Price and Stock
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onsemi NSVMMBT5401WT1GBipolar (BJT) Single Transistor, PNP, 150 V, 500 mA, 400 mW, SOT-323, Surface Mount - Tape and Reel (Alt: NSVMMBT5401WT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NSVMMBT5401WT1G | Tape & Reel | 2,415,000 | 51 Weeks | 3,000 |
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NSVMMBT5401WT1G | 51 Weeks | 21,000 |
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NSVMMBT5401WT1G | 52 Weeks | 3,000 |
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NSVMMBT5401WT1G | 53 Weeks | 3,000 |
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onsemi MMBT5401LT1GBipolar (BJT) Single Transistor, General Purpose, PNP, 150 V, 500 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: MMBT5401LT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5401LT1G | Tape & Reel | 1,464,000 | 55 Weeks | 3,000 |
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Buy Now | ||||
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MMBT5401LT1G | 88,992 |
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MMBT5401LT1G | Tape & Reel | 47,215 | 100 |
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| MMBT5401LT1G | Cut Tape | 47,215 | 5 |
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Buy Now | ||||||
| MMBT5401LT1G | Cut Tape | 19,727 | 1 |
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| MMBT5401LT1G | Tape & Reel | 19,727 | 10 |
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MMBT5401LT1G | 5,043 |
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MMBT5401LT1G | 6,000 |
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MMBT5401LT1G | 10,000 |
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MMBT5401LT1G | 2,313,304 |
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MMBT5401LT1G | 55 Weeks | 48,000 |
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MMBT5401LT1G | 2,217,000 | 53 Weeks | 3,000 |
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MMBT5401LT1G | 4,786 |
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MMBT5401LT1G | 801,000 | 53 Weeks | 3,000 |
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MMBT5401LT1G | 79,000 |
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MMBT5401LT1G | 13,013 | 1 |
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MMBT5401LT1G | 600,000 |
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onsemi SMMBT5401LT1GBipolar (BJT) Single Transistor, PNP, 150 V, 500 mA, 225 mW, SOT-23, Surface Mount - Tape and Reel (Alt: SMMBT5401LT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SMMBT5401LT1G | Tape & Reel | 57,000 | 53 Weeks | 3,000 |
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Buy Now | ||||
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SMMBT5401LT1G | 20,006 |
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Buy Now | |||||||
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SMMBT5401LT1G | Bulk | 100 |
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SMMBT5401LT1G | 219,000 | 1 |
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SMMBT5401LT1G | 1 |
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SMMBT5401LT1G | 238,705 |
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SMMBT5401LT1G | 89,700 |
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SMMBT5401LT1G | 56 Weeks | 60,000 |
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SMMBT5401LT1G | 3,000 | 53 Weeks | 3,000 |
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SMMBT5401LT1G | 53 Weeks | 3,000 |
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SMMBT5401LT1G | 129,000 |
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SMMBT5401LT1G | 95,466 | 5 |
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SMMBT5401LT1G | 300,000 |
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Samtec Inc ST5-40-1.50-L-D-P-TR- Tape and Reel (Alt: ST5-40-1.50-L-D-P-TR) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ST5-40-1.50-L-D-P-TR | Tape & Reel | 9 Weeks, 2 Days | 825 |
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ST5-40-1.50-L-D-P-TR | 3,017 |
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ST5-40-1.50-L-D-P-TR | Cut Tape | 842 | 1 |
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ST5-40-1.50-L-D-P-TR | 93 | 1 |
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ST5-40-1.50-L-D-P-TR | 61 | 1 |
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ST5-40-1.50-L-D-P-TR | 3 Weeks | 1 |
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Central Semiconductor Corp CZT5401 BK- Boxed Product (Development Kits) (Alt: CZT5401 BK) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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CZT5401 BK | Box | 350 |
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Get Quote | ||||||