MMBT2222A
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-23 surface mount package, with 40 V collector-emitter voltage, 600 mA collector current, 300 mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT2222A
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Shikues Semiconductor
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MMBT2222A
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JCET Group
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NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT2222AM
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JCET Group
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MMBT2222AM is an NPN epitaxial planar transistor in a SOT-723 package with 40V collector-emitter breakdown voltage, 0.5A continuous collector current, and 300MHz transition frequency, suitable for high-speed switching and amplification applications. |
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MMST2222A
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JCET Group
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NPN transistor in SOT-323 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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MMBT2222A
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CREATEK Microelectronics
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NPN small signal transistor in SOT-23 package, with 40 V VCEO, 600 mA continuous collector current, 300 mW power dissipation, and DC current gain up to 300, suitable for medium power amplification and switching applications. |
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MMBT2222A 1P
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JCET Group
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MMBT2222A is an NPN transistor in SOT-23 package, featuring 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and DC current gain from 100 to 300, suitable for general-purpose switching and amplification applications. |
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MMBT2222A-G
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JCET Group
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MMBT2222A NPN transistor in SOT-23 package with 40V collector-emitter voltage, 600mA continuous collector current, 300mW power dissipation, and DC current gain ranging from 100 to 300. |
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MMBT2222AT
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Shikues Semiconductor
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Silicon Epitaxial Planar Transistor for switching and amplifier applications |
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MMBT2222AW
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CREATEK Microelectronics
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Dual NPN small signal transistor in SOT-323 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and transition frequency of 300MHz, suitable for medium power amplification and switching applications. |
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MMBT2222ADW
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CREATEK Microelectronics
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Dual NPN small signal transistor in SOT-363 package, with 40V VCEO, 600mA collector current, 200mW power dissipation, and transition frequency of 300MHz, suited for medium power amplification and switching applications. |
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MMDT2222AW
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CREATEK Microelectronics
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Dual NPN small signal transistor in SOT-363 package, with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. |
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MMBT2222A
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Shandong Jingdao Microelectronics Co Ltd
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NPN transistor in SOT-23 package with 40V VCEO, 600mA continuous collector current, 300mW power dissipation, and transition frequency up to 250MHz, suitable for high-frequency amplification and switching applications. |
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MMBT2222A
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AK Semiconductor
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MMBT2222A SOT-23 NPN transistor with 40V VCEO, 600mA continuous collector current, 150°C operating junction temperature, and 300MHz transition frequency in a compact surface-mount package. |
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MMBT2222A
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SLKOR
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Switching Transistor, VCEO 30-40V, VCBO 60-75V, VEBO 5.0-6.0V, Ic 600mA, PD 225-300mW, RΘJA 417°C/W, TJ -55 to +150°C. |
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MMBT2222AT
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JCET Group
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MMBT2222AT is an NPN transistor in a SOT-523 plastic package, featuring a collector-emitter voltage of 40V, collector current of 600mA, DC current gain up to 300, and transition frequency of 300MHz. |
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MMBT2222A
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Microdiode Semiconductor (MDD)
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Small Signal Bipolar Transistor |
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MMDT2222A
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JCET Group
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Dual NPN transistor in SOT-363 package with 40V collector-emitter voltage, 600mA continuous collector current, 200mW power dissipation, and DC current gain up to 300. |
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PZT2222A
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JCET Group
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NPN transistor in SOT-223 package with 40V collector-emitter voltage, 600mA continuous collector current, 1W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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MMST2222A
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Shenzhen Heketai Electronics Co Ltd
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NPN bipolar transistor in SOT-323 surface mount package, with 40V collector-emitter voltage, 600mA collector current, 200mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications. |
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MMBT2222A
