T163VU Search Results

T163VU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
T163VU-SF-F		Vishay Semiconductors	PHOTO SENSOR	Original	PDF	70.37KB

T163VU Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability	Original	T163VU T163VU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
T163VU Abstract: FVOV6870 MIL-HDBK-263 81133 Contextual Info: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	T163VU 2002/95/EC 2002/96/EC T163VU 18-Jul-08 FVOV6870 MIL-HDBK-263 81133	PDF
Contextual Info: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	T163VU 2002/95/EC 2002/96/EC T163VU 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	T163VU 2002/95/EC 2002/96/EC T163VU 11-Mar-11	PDF
Contextual Info: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability	Original	T163VU T163VU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
chip diode "sawn on foil" Abstract: FVOV6870 MIL-HDBK-263 Contextual Info: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	T163VU 2002/95/EC 2002/96/EC T163VU 18-Jul-08 chip diode "sawn on foil" FVOV6870 MIL-HDBK-263	PDF
Contextual Info: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	T163VU 2002/95/EC 2002/96/EC T163VU 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12	PDF