T018P Search Results

Contextual Info: SIEMENS ; SFM 4212 IRED T018PACKAGE Package Dimensions in rum FEATURES Maximum Ratings * InGaAsP/lnP-IRED * Emission Wavelength: 2"d Optical Window 1300 nm * Suitable for Bit Rates up to 50 Mbit/s * 200 Mbit/s with Appropriate Pulse Shaping of Modulation Current

LF50

Contextual Info: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)

Contextual Info: SIEMENS SFH 4413 LOW POWER LASERDIODE IN T018PACKAGE P a c k a g e D im e n s io n s in m m 3 75 3 .2 5 150 1 1 .0 1.3 1 1" 0 0 .5 00 3 0 3 .7 0 3 .4 ^ I 1 57 1 37 M D .; LD [O l 0 I ¡A: E m ittin g F a ce t FEATURES Maximum Ratings • InGaAsP/lnP MCRW-Laser Diode

Contextual Info: SIEMENS SFH2210 TERNARY PIN PHOTODIODE T018PA C K A G E P relim in ary Data Sheet Package Dimensions in mm Chip Location OD o —j^ FEATURES Maximum Ratings * InGaAs/lnP PIN Photodiode * Sensitive Receiver for the 2nd and 3rd Window 1300 nm and 1500 nm * Suitable for Bit Rates up to 1.2 Gbit/s

Contextual Info: bOE D • ÔE35bOS 004b55b DSfl ■ SIEG SIEMENS AKTIENGESELLSCHAF SIEMENS SFH4413 LOW POWER LASERDIODE IN T018PACKAG E Package Dimensions in mm FEATURES Maximum Ratings • InGaAsP/lnP MCRW-Laser Diode • Emission Wavelength: 1300 nm Output power ratings refer to the total em itted power at front window.

Contextual Info: bOE I • 8235bOS 0041,544 33b B S I E 6 -7 SIEMENS SFH2213 SIEMENS AKTIENGESEL LSCHAF P a ck a g e Din-:— TERNARY PIN PHOTODIODE T018PACKAGE ;- FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode O p e ra tin g a n d Sto ra g e Tem peratu re R a n g e T0 P , T V r a .-4 0 ° to +85°C

Contextual Info: SIEMENS SFH 2213 TERNARY PIN PHOTODIODE T018P A C K A G E FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode • Sensitive Receiver fo r the 2nd and 3rd W indow 1300 nm and 1500 nm • Suitable fo r Bit Rates up to 1.2 Gbit/s O peratin g and Storage T em perature Range (Top, Ts tg ) .- 4 0 ° to +85°C

Contextual Info: SIEMENS SFH 2212 INFRARED EMITTING DIODE T018PACKAGE P relim inary Data Sheet P a cka g e D im e n sio n s in mm C hip Loacation 1 95_ 1.65 0.35 Anode ¡zuriza? 04.80 0 4.55 0.25 I — V .J _; = f ~ / GND L-l8 42.4 1 27 Lead sp a cin g 'T 1 50 12 0 FEATURES

Contextual Info: TERNARY PIN PHOTODIODE T018PACKAGE FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode • Sensitive Receiver for the 2nd and 3rd Window 1300 nm and 1500 nm • Suitable for Bit Rates up to 1.2 Gbit/* • Low Junction Capacitance • Fast Switching Times

Contextual Info: SFH 2212 SIEMENS INFRARED EMITTING DIODE T018PA C K A G E Prelim in ary Data Sheet P a c k a g e D im e n sio n s in m m Chip Loacation 035 0 25 Anode I.J. 1 27 Lead spacing : ée L Cathode GND 24 " T 15.0 120 FEATURES M a x im u m R a tin g s • InGaAsP/lnP PIN Photodiode

T018P

Abstract: ASX 12 D
Contextual Info: SIEMENS SFH 2213 TERNARY PIN PHOTODIODE T018P A C K A G E P a c k a g e D im e n s io n s in m m 0 0 50 0 0 40 . C athode + Anode GND C hip location FEATURES Maximum Ratings • InGaAs/lnP-PIN-photodiode O peratin g and Storage Tem perature R ange T0P, Tg tg . -4 0 ° to + 85“ C

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

fototransistor

Abstract: AFD3000 AFE2000 FPE100 fototransistor ir T0180 AFD1200 AFE5100
Contextual Info: ABORN ELECTRONICS S3E J> Special Devices OGTTblM DDDODSb bT^ H A B E -p¿S -07 FIBER OPTIC EMITTERS DESCRIPTION DEVICE units çonditlons WAVELENGTH POWER OUT FORWARD VOLTAGE nM Ip=50mA Volts Ip*50mA uW Ip=5QmA T i n r PACKAGE FACE TIME DRAWING numerical APERATURE