SIZ998DT Search Results
SIZ998DT Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIZ998DT-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 30V 8-POWERPAIR | Original | 266.2KB |
SIZ998DT Price and Stock
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Vishay Siliconix SIZ998DT-T1-GE3MOSFET 2N-CH 30V 20A 8POWERPAIR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIZ998DT-T1-GE3 | Digi-Reel | 6,703 | 1 |
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Vishay Intertechnologies SIZ998DT-T1-GE3DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIZ998DT-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIZ998DT-T1-GE3 | Reel | 22 Weeks | 3,000 |
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SIZ998DT-T1-GE3 | 6,683 |
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SIZ998DT-T1-GE3 | Cut Tape | 11,084 | 1 |
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SIZ998DT-T1-GE3 | Reel | 3,000 |
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SIZ998DT-T1-GE3 | 3,000 |
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SIZ998DT-T1-GE3 | 24 Weeks | 6,000 |
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SIZ998DT-T1-GE3 | 3,000 | 23 Weeks | 3,000 |
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SIZ998DT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiZ998DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel1 30 Channel2 30 ID (A) a, g Qg (TYP.) RDS(on) (Ω) (MAX.) 0.0067 at VGS = 10 V 20 0.0100 at VGS = 4.5 V 20 0.0028 at VGS = 10 V 60 0.0038 at VGS = 4.5 V |
Original |
SiZ998DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiZ998DT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiZ998DT AN609, 03-Sep-14 |