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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIS476DN-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A 1212-8 PWR	Original	PDF		13

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Vishay Intertechnologies SIS476DN-T1-GE3 Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIS476DN-T1-GE3				1	1 $1.73 10 $0.97 100 $0.73 1000 $0.57 10000 $0.56	Get Quote
Verical	SIS476DN-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.46	Buy Now
Avnet Americas	SIS476DN-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.45	Buy Now
Mouser Electronics	SIS476DN-T1-GE3		58,295			1 $1.88 10 $0.90 100 $0.80 1000 $0.62 10000 $0.51	Buy Now
Newark ()	SIS476DN-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.78	Buy Now
	SIS476DN-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.49	Buy Now

TTI	SIS476DN-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.51	Buy Now
Quest Components	SIS476DN-T1-GE3		240			1 $1.32 10 $1.32 100 $0.40 1000 $0.40 10000 $0.40	Buy Now
Avnet Asia	SIS476DN-T1-GE3			54 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIS476DN-T1-GE3			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIS476DN-T1-GE3 SEMICONCUCTOR, MOSFET;TRENCHFET;N-CHANNEL;30V;40A;2.5MOHM @ 10V;POWERPAK 1212-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIS476DN-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $1.41	Get Quote

SIS476DN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET	Original	sis476dn 2002/95/ec sis476dn-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: SPICE Device Model SiS476DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis476dn 11-mar-11	PDF
Contextual Info: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET	Original	sis476dn 2002/95/ec sis476dn-t1-ge3 11-mar-11	PDF
mosfet equivalent 2310 Abstract: TSOP 86 land pattern Contextual Info: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET	Original	sis476dn 2002/95/ec sis476dn-t1-ge3 2011/65/eu +4js709a 02-oct-12 mosfet equivalent 2310 tsop 86 land pattern	PDF
Contextual Info: SPICE Device Model SiS476DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sis476dn 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SiS476DN_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	sis476dn an609 5031m 3105u +62084m 2291m 7882m 5191m 0227u 15-nov-11	PDF
Contextual Info: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET	Original	sis476dn 2002/95/ec sis476dn-t1-ge3 2011/65/eu +112-mar-12	PDF
TSOP 86 land pattern Abstract: mosfet equivalent 2310 Contextual Info: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET	Original	sis476dn 2002/95/ec sis476dn-t1-ge3 2011/65/eu +312-mar-12 tsop 86 land pattern mosfet equivalent 2310	PDF
Contextual Info: New Product SiS476DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) (Max.) ID (A)f 0.0025 at VGS = 10 V 40g 0.0035 at VGS = 4.5 V 40g • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen IV Power MOSFET	Original	sis476dn 2002/95/ec sis476dn-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	siz916dt siz340dt siz914dt vmn-pt0306-1402	PDF
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	vt1045bp-m3/4w vbt1045bp-e3/4w vft1045bp-m3/4w vt2045bp-m3/4w +16vbt2045bp-e3/4w vft2045bp-m3/4w vt3045bp-m3/4w vbt3045bp-e3/4w vft3045bp-m3/4w vt4045bp-m3/4w powerpak 1212-8 mosfet so8 smd dip4 powerpak so-8 cny65 cross sisa12dn-t1-ge3 smd-4 cny66 cross vbt4045bp-e3 4 dip	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
POWERPAK SO8 Abstract: SIS32 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	siz916dt vmn-pt0306-1209 powerpak so8 sis32	PDF
N-Channel MOSFETs Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	sc-70 sc-75 1212-8s vmn-ms6926-1406 +1n-channel mosfets	PDF