SIR864DP Search Results

434474-1

Abstract: 70733
Contextual Info: SiR864DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: SPICE Device Model SiR864DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0036 at VGS = 10 V 40g 0.0045 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 20 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: SPICE Device Model SiR864DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®