SIR838DP Search Results

AN609

Abstract: SIR838DP
Contextual Info: SiR838DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SIR838DP

Abstract: SiR838DP-T1-GE3
Contextual Info: New Product SiR838DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested

Contextual Info: New Product SiR838DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested

Contextual Info: New Product SiR838DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % UIS Tested

Contextual Info: SiR838DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 150 0.033 at VGS = 10 V 35 33 nC • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®