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SIR640DP Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIR640DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A SO-8	Original	PDF		9

SIR640DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 40 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 • TrenchFET® Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested	Original	sir640dp sir640dp-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
sir640 Abstract: made 314 vishay Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification	Original	sir640dp 2002/95/ec sir640dp-t1-ge3 2011/65/eu +312-mar-12 sir640 made 314 vishay	PDF
Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification	Original	sir640dp 2002/95/ec sir640dp-t1-ge3 11-mar-11	PDF
SiR640DP Contextual Info: SiR640DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sir640dp an609 0565m 9188m +50251m 7276m 9326m 3722m 0362m	PDF
Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification	Original	sir640dp 2002/95/ec sir640dp-t1-ge3 2011/65/eu +112-mar-12	PDF
sir640 Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification	Original	sir640dp 2002/95/ec sir640dp-t1-ge3 11-mar-11 +1sir640	PDF
PowerPAK 1212-8 Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Low RDS ON of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V I INNOVAT AND TEC O L OGY 40 V and 60 V TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 Higher Efficiency and Power Density with a Combination of	Original	sc-70 o-220 o-236 sir640dp +11si4038dy sis488dn sir662dp sup90n06-02p sum90n06-02p si4062dy powerpak 1212-8 sir640 sia442dj so8l powerpak so-8	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics	Original	sir640dp si4038dy sis488dn sir662dp +6o-220 o-263 sup90n06-02p sum90n06-02p si4062dy sij462dp	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF