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SIR404DP Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIR404DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 60A 8-SOIC	Original	PDF		9

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Vishay Intertechnologies


Vishay Intertechnologies SIR404DP-T1-GE3 - Tape and Reel (Alt: SIR404DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIR404DP-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.88	Buy Now
Mouser Electronics	SIR404DP-T1-GE3		2,200			1 $2.94 10 $1.46 100 $1.31 1000 $1.03 10000 $0.93	Buy Now
Newark ()	SIR404DP-T1-GE3	Cut Tape	1,188		1	1 $3.35 10 $3.35 100 $1.72 1000 $1.44 10000 $1.35	Buy Now
	SIR404DP-T1-GE3	Tape & Reel	1,188		100	1 - 10 - 100 $1.72 1000 $1.44 10000 $1.35	Buy Now
	SIR404DP-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.19	Buy Now
TTI	SIR404DP-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.91	Buy Now
TME	SIR404DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $1.33	Get Quote

Component Electronics, Inc	SIR404DP-T1-GE3		772			1 $2.31 10 $2.31 100 $1.73 1000 $1.50 10000 $1.50	Buy Now
EBV Elektronik	SIR404DP-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIR404DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
64895 Contextual Info: SPICE Device Model SiR404DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sir404dp 18-jul-08 64895	PDF
TB-17 Contextual Info: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS	Original	sir404dp 2002/95/ec sir404dp-t1-ge3 18-jul-08 +1tb-17	PDF
Contextual Info: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS	Original	sir404dp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS	Original	sir404dp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: SPICE Device Model SiR404DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sir404dp 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS	Original	sir404dp 2002/95/ec sir404dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS	Original	sir404dp 2002/95/ec 2011/65/eu 12-mar-12	PDF
Contextual Info: New Product SiR404DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00160 at VGS = 10 V 60 0.00175 at VGS = 4.5 V 60 0.00225 at VGS = 2.5 V 60 VDS (V) 20 Qg (Typ.) 64.5 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS	Original	sir404dp 2002/95/ec sir404dp-t1-ge3 11-mar-11	PDF
mosfet 0018 Abstract: transistor c 6073 AN609 Contextual Info: SiR404DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sir404dp an609 02-apr-09 mosfet 0018 +1transistor c 6073	PDF
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	vmn-pt0105-1007	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	diod92 vmn-sg2127-0911 diode sot-23 marking 15d si4210 +8si4812b si-4102 si7149dp sim400 si4932 si7135 sib914 si4477	PDF