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SIHW33N60E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHW33N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 33A TO-247AD	Original	PDF		8

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Vishay Siliconix SIHW33N60E-GE3 MOSFET N-CH 600V 33A TO247AD
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DigiKey	SIHW33N60E-GE3	Tube			1	1 $7.23 10 $5.29 100 $5.29 1000 $3.00 10000 $3.00	Buy Now
Vishay Intertechnologies SIHW33N60E-GE3 - Tape and Reel (Alt: SIHW33N60E-GE3)
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Mouser Electronics	SIHW33N60E-GE3		208			1 $7.38 10 $5.40 100 $4.37 1000 $3.00 10000 $3.00	Buy Now
Newark	SIHW33N60E-GE3	Bulk			500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	SIHW33N60E-GE3		272		2	1 - 10 $3.07 100 $2.21 1000 $1.94 10000 $1.94	Buy Now
Quest Components ()	SIHW33N60E-GE3		217			1 $6.33 10 $6.33 100 $2.95 1000 $2.74 10000 $2.74	Buy Now
	SIHW33N60E-GE3		217			1 $7.27 10 $7.27 100 $4.48 1000 $4.48 10000 $4.48	Buy Now

TTI	SIHW33N60E-GE3	Tube			480	1 - 10 - 100 - 1000 $2.93 10000 $2.93	Buy Now

SIHW33N60E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses	Original	SiHW33N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SiHW33N60E Contextual Info: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses	Original	SiHW33N60E O-247AD 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SiHW33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM): Ron x Qg 650 VGS = 10 V • Low Input Capacitance (Ciss) 0.099 Qg (Max.) (nC) 150 • Reducted Switching and Conduction Losses	Original	SiHW33N60E O-247AD 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
TO-247 FULLPAK Package Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction	Original	enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E	PDF