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    SIHP28N65E Search Results

    SIHP28N65E Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHP28N65EF-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 28A TO-220AB Original PDF 145.24KB
    SIHP28N65E-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 29A TO220AB Original PDF 290.99KB
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    SIHP28N65E Price and Stock

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    Vishay Siliconix SIHP28N65E-GE3

    MOSFET N-CH 650V 29A TO220AB
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    DigiKey SIHP28N65E-GE3 Tube 1,000
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    Vishay Siliconix SIHP28N65EF-GE3

    MOSFET N-CH 650V 28A TO220AB
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    DigiKey SIHP28N65EF-GE3 Tube 1,000
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    Bristol Electronics SIHP28N65EF-GE3 900 1
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    Vishay Intertechnologies SIHP28N65E-GE3

    - Tape and Reel (Alt: SIHP28N65E-GE3)
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    Avnet Americas SIHP28N65E-GE3 Reel 19 Weeks 1,000
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    Mouser Electronics SIHP28N65E-GE3
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    Newark SIHP28N65E-GE3 Bulk 983 1
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    TME SIHP28N65E-GE3 1
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    EBV Elektronik SIHP28N65E-GE3 20 Weeks 50
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    Vishay Intertechnologies SIHP28N65EF-GE3

    - Tape and Reel (Alt: SIHP28N65EF-GE3)
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    Avnet Americas SIHP28N65EF-GE3 Reel 19 Weeks 1,000
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    Mouser Electronics SIHP28N65EF-GE3 923
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    Newark SIHP28N65EF-GE3 Bulk 999 1
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    TME SIHP28N65EF-GE3 1
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    EBV Elektronik SIHP28N65EF-GE3 20 Weeks 50
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    IBS Electronics SIHP28N65EF-GE3 3
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    SIHP28N65E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHP28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC) 37


    Original     		SiHP28N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHP28N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.122 140 Qgs (nC) 21 Qgd (nC)


    Original     		SiHP28N65E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHP28N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP28N65E AN609, 3921m 0936m 1969m 2024m 21-Jun-13 PDF