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    SIHP23N60E Search Results

    SIHP23N60E Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHP23N60E-BE3
    		Vishay Siliconix N-CHANNEL 600V Original PDF 297.76KB 8
    SIHP23N60E-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 23A TO-220AB Original PDF 7
    SF Impression Pixel

    SIHP23N60E Price and Stock

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    Vishay Siliconix SIHP23N60E-BE3

    N-CHANNEL 600V
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    DigiKey SIHP23N60E-BE3 Tube 984 1
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    Vishay Siliconix SIHP23N60E-GE3

    MOSFET N-CH 600V 23A TO220AB
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    DigiKey SIHP23N60E-GE3 Tube 803 1
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    Vishay Intertechnologies SIHP23N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHP23N60E-GE3)
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    Avnet Americas SIHP23N60E-GE3 Reel 22 Weeks 1,000
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    Mouser Electronics SIHP23N60E-GE3 978
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    TTI SIHP23N60E-GE3 Tube 1,000
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    EBV Elektronik SIHP23N60E-GE3 23 Weeks 50
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    Vishay Intertechnologies SIHP23N60E-BE3

    N-CHANNEL 600V - Rail/Tube (Alt: SIHP23N60E-BE3)
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    Avnet Americas SIHP23N60E-BE3 Tube 22 Weeks 1,000
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    Mouser Electronics SIHP23N60E-BE3 1,440
    • 1 $3.69
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    TTI SIHP23N60E-BE3 Tube 2,000 50
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    SIHP23N60E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced switching and conduction losses


    Original     		SiHP23N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		SiHP23N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiHP23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP23N60E AN609, 6379m 4588m 1936u 0977m 02-Apr-13 PDF

    Contextual Info: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses


    Original     		SiHP23N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF