SIHP23N60E Search Results

SIHP23N60E Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHP23N60E-BE3		Vishay Siliconix	N-CHANNEL 600V	Original	PDF	297.76KB	8
SIHP23N60E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 23A TO-220AB	Original	PDF		7

SIHP23N60E Price and Stock

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Vishay Intertechnologies SIHP23N60E-BE3 N-CHANNEL 600V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP23N60E-BE3	Tube	980		1	1 $4.21 10 $4.21 100 $1.96 1000 $1.49 10000 $1.45	Buy Now
Avnet Americas	SIHP23N60E-BE3	Tube		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.46 10000 $1.40	Buy Now
Mouser Electronics	SIHP23N60E-BE3		40			1 $3.78 10 $1.79 100 $1.75 1000 $1.49 10000 $1.45	Buy Now
TTI	SIHP23N60E-BE3	Tube	2,000		50	1 - 10 - 100 $1.63 1000 $1.49 10000 $1.45	Buy Now
Vishay Intertechnologies SIHP23N60E-GE3 MOSFET N-CH 600V 23A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP23N60E-GE3	Tube	803		1	1 $4.21 10 $4.21 100 $1.96 1000 $1.49 10000 $1.45	Buy Now
Avnet Americas	SIHP23N60E-GE3	Tape & Reel		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.46 10000 $1.40	Buy Now
Mouser Electronics	SIHP23N60E-GE3		978			1 $4.18 10 $2.16 100 $1.96 1000 $1.49 10000 $1.45	Buy Now
TTI	SIHP23N60E-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.53 10000 $1.45	Buy Now
EBV Elektronik	SIHP23N60E-GE3			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Siliconix SIHP23N60E-BE3 SIHP23N60E-BE3 BY SILICONIX (VISHAY) IS AN N-CHANNEL MOSFET WITH A 600V DRAIN-TO-SOURCE VOLTAGE 23A CONTINUOUS DRAIN CURRENT RDS(ON) LOW ON RESISTANCE AND A TO-220 PACKAGE SUITABLE FOR HIGH-VOLTAGE SWITCHING APPLICATIONS.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
IBS Electronics	SIHP23N60E-BE3				1,000	1 - 10 - 100 - 1000 $2.39 10000 $2.34	Buy Now

SIHP23N60E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced switching and conduction losses	Original	SiHP23N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses	Original	SiHP23N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHP23N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHP23N60E AN609, 6379m 4588m 1936u 0977m 02-Apr-13	PDF
Contextual Info: SiHP23N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V • Low Input Capacitance (Ciss) 0.158 Qg max. (nC) 95 • Reduced Switching and Conduction Losses	Original	SiHP23N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF