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SIHP12N65E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHP12N65E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 12A TO-220AB	Original	PDF		7

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Vishay Siliconix SIHP12N65E-GE3 MOSFET N-CH 650V 12A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP12N65E-GE3	Tube			1	1 $1.20 10 $1.18 100 $1.13 1000 $0.97 10000 $0.96	Buy Now
Vishay Intertechnologies SIHP12N65E-GE3 - Tape and Reel (Alt: SIHP12N65E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHP12N65E-GE3	Reel		19 Weeks	1,000	1 - 10 - 100 - 1000 $0.96 10000 $0.92	Buy Now
Mouser Electronics	SIHP12N65E-GE3		576			1 $3.17 10 $2.05 100 $1.51 1000 $0.97 10000 $0.96	Buy Now
Newark	SIHP12N65E-GE3	Bulk	923		1	1 $3.52 10 $2.40 100 $1.86 1000 $1.32 10000 $1.31	Buy Now
TTI	SIHP12N65E-GE3	Tube	2,000		50	1 - 10 - 100 $1.04 1000 $0.97 10000 $0.95	Buy Now
TME	SIHP12N65E-GE3				1	1 $3.05 10 $1.96 100 $1.63 1000 $1.63 10000 $1.63	Get Quote

EBV Elektronik	SIHP12N65E-GE3			20 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SIHP12N65E-GE3				1,000	1 - 10 - 100 - 1000 $1.47 10000 $1.43	Buy Now

SIHP12N65E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Generation Two 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • Low Figure-of-Merit (FOM) Ron x Qg 0.392 • • • • • 70 Qgs (nC)	Original	SiHP12N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16	Original	SiHP12N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHP12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16 Configuration	Original	SiHP12N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHP12N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHP12N65E AN609, 9430m 6635m 1327m 2651u 02-Apr-13	PDF