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    Vishay Intertechnologies SIHL510STRL-GE3

    Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 18A; 43W; D2PAK,TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHL510STRL-GE3 1
    • 1 $0.80
    • 10 $0.58
    • 100 $0.46
    • 1000 $0.41
    • 10000 $0.41
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    Avnet Americas SIHL510STRL-GE3 Tape & Reel 12 Weeks 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.36
    • 10000 $0.34
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    Mouser Electronics SIHL510STRL-GE3
    • 1 $1.65
    • 10 $1.02
    • 100 $0.67
    • 1000 $0.36
    • 10000 $0.35
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    Bristol Electronics SIHL510STRL-GE3 630
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    Quest Components SIHL510STRL-GE3 504
    • 1 $1.62
    • 10 $1.62
    • 100 $0.81
    • 1000 $0.65
    • 10000 $0.65
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    EBV Elektronik SIHL510STRL-GE3 57 Weeks 800
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    Vishay Siliconix SIHL510STRL-GE3

    SIHL510STRL-GE3 N-CHANNEL MOSFET TRANSISTOR, 5.6 A, 100 V, 2+TAB-PIN TO-263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHL510STRL-GE3 Bulk 100
    • 1 -
    • 10 -
    • 100 $2.40
    • 1000 $1.77
    • 10000 $1.77
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    SIHL510 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRL510

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive


    Original     		irl510sihl5102002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    IRL510PBF

    Abstract: IRL510
    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Available • Repetitive Avalanche Rated 0.54 RoHS* Qg (Max.) (nC) 6.1 • Logic-Level Gate Drive Qgs (nC) 2.6 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		irl510sihl510o-22018-jul-08+1irl510pbf PDF

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Available • Repetitive Avalanche Rated 0.54 RoHS* Qg (Max.) (nC) 6.1 • Logic-Level Gate Drive Qgs (nC) 2.6 • RDS(on) Specified at VGS = 4 V and 5 V


    Original     		irl510sihl510o-22012-mar-07 PDF

    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irl510ssihl510s2002/95/eco-263+111-mar-11 PDF

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive


    Original     		irl510sihl5102002/95/eco-220ab+3o-220aelectronic2011/65/eujs709a PDF

    DIODE SMD 1 E 26

    Abstract: SIHL510S
    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irl510ssihl510ssmd-22018-jul-08+1diode smd 1 e 26 PDF

    Contextual Info: IRL510_RC, SiHL510_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irl510sihl510an609configurati08-sep-10+46526m0889m3727m8321m PDF

    Contextual Info: IRL510S_RC, SiHL510S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irl510ssihl510san609configuraep-10+49223m1402m2944m9335m PDF

    IRL510

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive


    Original     		irl510sihl5102002/95/eco-220ab+111-mar-11 PDF

    SIHL510S

    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irl510ssihl510ssmd-22012-mar-07 PDF

    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irl510ssihl510s2002/95/eco-263+111-mar-11 PDF

    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irl510ssihl510s2002/95/eco-263+22011/65/eu12-mar-12 PDF

    IRL510S

    Abstract: 90380 SIHL510S
    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irl510ssihl510so-26318-jul-08+190380 PDF

    IRL510S

    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S S • Halogen-free According to IEC 61249-2-21


    Original     		irl510ssihl510so-2632002/95/ec+111-mar-11 PDF

    IRL510

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive


    Original     		irl510sihl510o-22018-jul-08 PDF

    IRL510

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive


    Original     		irl510sihl5102002/95/eco-220ab+111-mar-11 PDF

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive


    Original     		irl510sihl5102002/95/eco-220ab+3o-220aelectronic2011/65/eujs709a PDF

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive


    Original     		irl510sihl5102002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    IRL510S

    Abstract: 90380 SIHL510S
    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irl510ssihl510so-26318-jul-08+190380 PDF

    Contextual Info: IRL510, SiHL510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Available • Repetitive Avalanche Rated 0.54 RoHS* • Logic-Level Gate Drive


    Original     		irl510sihl5102002/95/eco-220ab+3o-220emarks2011/65/eu12-mar-12 PDF

    Contextual Info: IRL510S, SiHL510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) () VGS = 5 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irl510ssihl510so-2632002/95/ec+32011/65/eujs709a02-oct-12 PDF