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SIHFS9N60A Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHFS9N60A-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9.2A TO263	Original	PDF	234.08KB

SIHFS9N60A Price and Stock

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Vishay Intertechnologies


Vishay Intertechnologies SIHFS9N60A-GE3 Transistor: N-MOSFET; unipolar; 600V; 5.8A; Idm: 37A; 170W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHFS9N60A-GE3				1	1 $2.79 10 $1.95 100 $1.51 1000 $1.51 10000 $1.51	Get Quote
Avnet Americas	SIHFS9N60A-GE3	Tape & Reel		33 Weeks	1,000	1 - 10 - 100 - 1000 $0.87 10000 $0.83	Buy Now
TTI	SIHFS9N60A-GE3	Reel			1,000	1 - 10 - 100 - 1000 $1.06 10000 $1.06	Buy Now
EBV Elektronik	SIHFS9N60A-GE3			49 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIHFS9N60A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFS9N60APBF Abstract: IRFS9N60A SiHFS9N60A SiHFS9N60A-E3 Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	irfs9n60a sihfs9n60a o-263 18-jul-08 +2irfs9n60apbf sihfs9n60a-e3	PDF
Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfs9n60a sihfs9n60a 2002/95/ec o-263 +22011/65/eu 12-mar-12	PDF
Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfs9n60a sihfs9n60a 2002/95/ec o-263 +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfs9n60a sihfs9n60a 2002/95/ec o-263 +118-jul-08	PDF
Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfs9n60a sihfs9n60a 2002/95/ec o-263 +111-mar-11	PDF
IRFS9N60A Abstract: SiHFS9N60A SiHFS9N60A-E3 IRFS9N60APBF Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfs9n60a sihfs9n60a 2002/95/ec o-263 +311-mar-11 sihfs9n60a-e3 irfs9n60apbf	PDF
IRFS9N60A Abstract: IRFS9N60APBF SiHFS9N60A SiHFS9N60A-E3 s09 355 Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.75 Qg (Max.) (nC) 49 Qgs (nC) 13 Qgd (nC) 20 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	irfs9n60a sihfs9n60a o-263 18-jul-08 +3irfs9n60apbf sihfs9n60a-e3 s09 355	PDF
Contextual Info: IRFS9N60A_RC, SiHFS9N60A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	irfs9n60a sihfs9n60a an609 5126m +46185m 3182m 5507m 4788m	PDF
Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfs9n60a sihfs9n60a 2002/95/ec o-263 +22011/65/eu 12-mar-12	PDF
Contextual Info: IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness	Original	irfs9n60a sihfs9n60a 2002/95/ec o-263 +111-mar-11	PDF