SIHFPF30 Search Results

IRFPF30

Abstract: SiHFPF30
Contextual Info: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole

Contextual Info: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated

Contextual Info: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration COMPLIANT • Ease of Paralleling

Contextual Info: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole

Contextual Info: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration COMPLIANT • Ease of Paralleling

AN609

Abstract: IRFPF30 SiHFPF30
Contextual Info: IRFPF30_RC, SiHFPF30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration COMPLIANT • Ease of Paralleling

IRFPF30

Abstract: SiHFPF30
Contextual Info: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Available • Repetitive Avalanche Rated 3.7 • Isolated Central Mounting Hole

IRFPF30

Contextual Info: IRFPF30, SiHFPF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) • Isolated Central Mounting Hole 78 Qgs (nC) 10 Qgd (nC) 42 Configuration COMPLIANT • Ease of Paralleling