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    SIHFPC50 Search Results

    SIHFPC50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		IRFPC50A, SiHFPC50A 2002/95/EC O-247AC O-247AC IRFPC50APbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRFPC50LC, SiHFPC50LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiHFPC50LC

    Abstract: IRFPC50LC
    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


    Original     		IRFPC50LC, SiHFPC50LC O-247 18-Jul-08 IRFPC50LC PDF

    IRFPC50

    Abstract: SiHFPC50
    Contextual Info: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the


    Original     		IRFPC50, SiHFPC50 O-247AC O-220AB O-247AC O-218 11-Mar-11 IRFPC50 PDF

    IRFPC50A

    Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		IRFPC50A, SiHFPC50A 2002/95/EC O-247AC 11-Mar-11 IRFPC50A PDF

    IRFPC50LC

    Abstract: SiHFPC50LC
    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


    Original     		IRFPC50LC, SiHFPC50LC O-247 18-Jul-08 IRFPC50LC PDF

    Contextual Info: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the


    Original     		IRFPC50, SiHFPC50 2002/95/EC O-247AC O-247AC O-22hay 11-Mar-11 PDF

    Contextual Info: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the


    Original     		IRFPC50, SiHFPC50 2002/95/EC O-247AC O-247AC O-22trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Contextual Info: IRFPC50_RC, SiHFPC50_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRFPC50 SiHFPC50 AN609, 07-Jul-10 PDF

    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRFPC50LC, SiHFPC50LC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		IRFPC50A, SiHFPC50A 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRFPC50LC, SiHFPC50LC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFPC50A, SiHFPC50A O-247 O-247 IRFPC50APbF SiHFPC50A-E3 IRFPC50Amerchantability, 12-Mar-07 PDF

    irfpc50

    Abstract: MOSFET IRFpc50
    Contextual Info: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		IRFPC50, SiHFPC50 O-247 O-247 O-220 12-Mar-07 irfpc50 MOSFET IRFpc50 PDF

    IRFPC50A

    Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFPC50A, SiHFPC50A O-247 18-Jul-08 IRFPC50A PDF

    IRFPC50LC

    Abstract: SiHFPC50LC
    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRFPC50LC, SiHFPC50LC O-247 11-Mar-11 IRFPC50LC PDF

    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


    Original     		IRFPC50LC, SiHFPC50LC 12-Mar-07 PDF

    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRFPC50LC, SiHFPC50LC 2002/95/EC 11-Mar-11 PDF

    Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		IRFPC50A, SiHFPC50A 2002/95/EC O-247AC O-247AC IRFPC50APbF 11-Mar-11 PDF

    Contextual Info: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247AC Third generation Power MOSFETs from Vishay provide the


    Original     		IRFPC50, SiHFPC50 O-247AC O-220AB O-247AC O-218 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    IRFPC50A

    Contextual Info: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.58 Qg (Max.) (nC) 70 Qgs (nC) 19 Qgd (nC) 28 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFPC50A, SiHFPC50A O-247 18-Jul-08 IRFPC50A PDF

    irfpc50

    Abstract: MOSFET IRFpc50 SiHFPC50
    Contextual Info: IRFPC50, SiHFPC50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 140 Qgs (nC) 20 Qgd (nC) 69 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		IRFPC50, SiHFPC50 O-247 O-247 18-Jul-08 irfpc50 MOSFET IRFpc50 PDF

    Contextual Info: IRFPC50LC_RC, SiHFPC50LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		IRFPC50LC SiHFPC50LC AN609, 06-Jul-10 PDF

    Contextual Info: IRFPC50LC, SiHFPC50LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.60 84 Qgs (nC) 18 Qgd (nC) 36 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRFPC50LC, SiHFPC50LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF