SIHFP264 Search Results

IRFP264N

Abstract: IRFP264n equivalent SiHFP264N
Contextual Info: IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single D TO-247 Advanced Process Technology Dynamic dV/dt Rating

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

IRFP264

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP264

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

IRFP264

Abstract: AN609
Contextual Info: IRFP264_RC, SiHFP264_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.060 Qg (Max.) (nC) 210 Qgs (nC) 34 Qgd (nC) 94 Configuration Single D TO-247 Advanced Process Technology Dynamic dV/dt Rating

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP264

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

IRFP264

Abstract: SiHFP264
Contextual Info: IRFP264, SiHFP264 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.075 Qg (Max.) (nC) 210 Qgs (nC) 35 Qgd (nC) 98 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated