SIHFP054 Search Results
SIHFP054 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: IRFP054_RC, SiHFP054_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
Original |
irfp054sihfp054an60907-jun-10 | |
|
Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
Original |
irfp054sihfp0542002/95/eco-247ac+3 | |
|
Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling |
Original |
irfp054sihfp054o-247o-220+2 | |
irfp054Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling |
Original |
irfp054sihfp054o-24718-jul-08 | |
irfp054Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling |
Original |
irfp054sihfp054o-24718-jul-08 | |
|
Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
Original |
irfp054sihfp0542002/95/eco-247ac+2 | |
|
Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
Original |
irfp054sihfp0542002/95/eco-247ac+2 | |
|
Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
Original |
irfp054sihfp0542002/95/eco-247+2 | |
|
Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
Original |
irfp054sihfp0542002/95/eco-247ac+2 | |
|
Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
Original |
irfp054sihfp0542002/95/eco-247ac+3 |