SIHFP054 Search Results
SIHFP054 Datasheets Context Search
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Contextual Info: IRFP054_RC, SiHFP054_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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IRFP054 SiHFP054 AN609, 07-Jun-10 | |
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Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
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IRFP054, SiHFP054 2002/95/EC O-247AC O-247emarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling |
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IRFP054, SiHFP054 O-247 O-247 O-220 O-247merchantability, 12-Mar-07 | |
irfp054Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling |
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IRFP054, SiHFP054 O-247 O-247 18-Jul-08 irfp054 | |
irfp054Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 • Isolated Central Mounting Hole RoHS* COMPLIANT Qgs (nC) 48 • Fast Switching Qgd (nC) 54 • Ease of Paralleling |
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IRFP054, SiHFP054 O-247 O-247 18-Jul-08 irfp054 | |
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Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
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IRFP054, SiHFP054 2002/95/EC O-247AC O-247AC O-220ABtrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
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Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
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IRFP054, SiHFP054 2002/95/EC O-247AC O-247AC O-220ABhay 11-Mar-11 | |
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Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
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IRFP054, SiHFP054 2002/95/EC O-247 O-247 O-220 18-Jul-08 | |
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Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
Original |
IRFP054, SiHFP054 2002/95/EC O-247AC O-247AC O-220ABtrademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
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Contextual Info: IRFP054, SiHFP054 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.014 160 Qgs (nC) 48 Qgd (nC) 54 Configuration • Isolated Central Mounting Hole • 175 °C Operating Temperature |
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IRFP054, SiHFP054 2002/95/EC O-247AC O-247Aelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |