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SIHFI9530G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFI9530G Abstract: SiHFI9530G SiHFI9530G-E3 irfi9530 Contextual Info: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9530G, SiHFI9530G O-220 18-Jul-08 IRFI9530G SiHFI9530G-E3 irfi9530	PDF
IRFI9530G Abstract: SiHFI9530G SiHFI9530G-E3 irfi9530g_ Contextual Info: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9530G, SiHFI9530G O-220 11-Mar-11 IRFI9530G SiHFI9530G-E3 irfi9530g_	PDF
Contextual Info: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9530G, SiHFI9530G O-220 12-Mar-07	PDF
AN609 Abstract: IRFI9530G SiHFI9530G 14077 ON Contextual Info: IRFI9530G_RC, SiHFI9530G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFI9530G SiHFI9530G AN609, 11-May-10 AN609 14077 ON	PDF
Contextual Info: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9530G, SiHFI9530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9530G, SiHFI9530G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
irfi9530g Abstract: SiHFI9530G SiHFI9530G-E3 Contextual Info: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9530G, SiHFI9530G O-220 18-Jul-08 irfi9530g SiHFI9530G-E3	PDF
Contextual Info: IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature	Original	IRFI9530G, SiHFI9530G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF