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    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd91102011/65/eu2002/95/ec+112-mar-12 PDF

    irfd9110

    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd91102002/95/ec18-jul-08 PDF

    IRFD9110

    Abstract: IRFD9110PBF
    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd911018-jul-08irfd9110pbf PDF

    Contextual Info: IRFD9110_RC, SiHFD9110_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irfd9110sihfd9110an609configu-10+40426m8968m4501m6212m PDF

    IRFD9110

    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd911011-mar-11 PDF

    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd91102002/95/ec2011/65/eu+112-mar-12 PDF

    IRFD9110

    Abstract: SiHFD9110
    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HEXDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd911018-jul-08 PDF

    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd91102002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HVMDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd91102002/95/ec11-mar-11 PDF

    IRFD9110

    Abstract: SiHFD9110
    Contextual Info: IRFD9110, SiHFD9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S HEXDIP Available RoHS* COMPLIANT DESCRIPTION


    Original     		irfd9110sihfd911012-mar-07 PDF