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    SIHFD9010 Datasheets Context Search

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    SiHFD9010

    Contextual Info: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable


    Original     		irfd9010sihfd90102002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    diode 7449

    Abstract: AN609 IRFD9010 SiHFD9010
    Contextual Info: IRFD9010_RC, SiHFD9010_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irfd9010sihfd9010an6093823m+57939m2852m2261m26-oct-10diode 7449 PDF

    IRFD9010

    Abstract: IRFD9010PBF SiHFD9010
    Contextual Info: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable


    Original     		irfd9010sihfd90102002/95/ec18-jul-08+1irfd9010pbf PDF

    SiHFD9010

    Contextual Info: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable


    Original     		irfd9010sihfd90102002/95/ec2011/65/eu+112-mar-12 PDF

    IRFD9010

    Abstract: SiHFD9010
    Contextual Info: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable


    Original     		irfd9010sihfd90102002/95/ec2011/65/eu+112-mar-12 PDF

    IRFD9010

    Abstract: SiHFD9010
    Contextual Info: IRFD9010, SiHFD9010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 50 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 11 Qgs (nC) 3.8 Qgd (nC) 4.1 Configuration Single For Automatic Insertion Compact, End Stackable


    Original     		irfd9010sihfd90102002/95/ec11-mar-11 PDF