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    Vishay Siliconix SIHF730AS-GE3

    SIHF730AS-GE3 N-CHANNEL MOSFET TRANSISTOR, 5.5 A, 400 V, 3-PIN D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHF730AS-GE3 Bulk 100
    • 1 -
    • 10 -
    • 100 $4.01
    • 1000 $3.79
    • 10000 $3.79
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    Vishay Intertechnologies SIHF730AS-GE3

    Trans MOSFET N-CH 400V 5.5A 3-Pin(2+Tab) D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIHF730AS-GE3 900 1
    • 1 $1.88
    • 10 $1.88
    • 100 $0.69
    • 1000 $0.53
    • 10000 $0.53
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    Quest Components () SIHF730AS-GE3 720
    • 1 $2.40
    • 10 $2.40
    • 100 $2.40
    • 1000 $0.99
    • 10000 $0.99
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    SIHF730AS-GE3 720
    • 1 $2.50
    • 10 $2.50
    • 100 $0.75
    • 1000 $0.65
    • 10000 $0.65
    		Buy Now

    Vishay Intertechnologies SIHF730AL-GE3

    Transistor: N-MOSFET; unipolar; 400V; 22A; 74W; I2PAK,TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF730AL-GE3 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.67
    • 10000 $0.67
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    EBV Elektronik SIHF730AL-GE3 49 Weeks 50
    • 1 -
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    Vishay Intertechnologies SIHF730STRL-GE3

    Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF730STRL-GE3 1
    • 1 $1.29
    • 10 $1.17
    • 100 $0.92
    • 1000 $0.84
    • 10000 $0.84
    		Get Quote

    Vishay Intertechnologies SIHF730ASTRR-GE3

    Transistor: N-MOSFET; unipolar; 400V; 3.5A; Idm: 22A; 74W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF730ASTRR-GE3 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.82
    • 10000 $0.82
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    EBV Elektronik SIHF730ASTRR-GE3 49 Weeks 800
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    SIHF730 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    flyback xfmr 3.5 mh

    Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irf730asihf730a2002/95/eco-220ab+32011/65/eu12-mar-12flyback xfmr 3.5 mh PDF

    flyback xfmr 3.5 mh

    Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irf730asihf730a2002/95/eco-220ab+32011/65/eu12-mar-12flyback xfmr 3.5 mh PDF

    Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irf730asihf730a2002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    AN609

    Abstract: IRF730 SiHF730
    Contextual Info: IRF730_RC, SiHF730_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irf730sihf730an60912-mar-10 PDF

    7386

    Abstract: AN609 IRF730AL IRF730AS SiHF730AL SiHF730AS 90259
    Contextual Info: IRF730AS_RC, IRF730AL_RC, SiHF730AS_RC, SiHF730AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		irf730asirf730alsihf730assihf730al+4an60912-mar-10738690259 PDF

    IRF730

    Abstract: SiHF730 SiHF730-E3
    Contextual Info: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irf730sihf730o-22050lectual+218-jul-08sihf730-e3 PDF

    flyback xfmr 3.5 mh

    Contextual Info: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irf730assihf730asirf730alsihf730al+5o-262o-2632002/95/ec11-mar-11flyback xfmr 3.5 mh PDF

    flyback xfmr 3.5 mh

    Contextual Info: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irf730assihf730asirf730alsihf730al+5o-262o-2632002/95/ec11-mar-11flyback xfmr 3.5 mh PDF

    Contextual Info: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		irf730ssihf730s2002/95/eco-263+22011/65/eujs709a PDF

    Contextual Info: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irf730sihf7302002/95/eco-220ab+22011/65/eujs709a PDF

    Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)


    Original     		irf730asihf730aan1001o-220+112-mar-07 PDF

    Contextual Info: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		irf730ssihf730s2002/95/eco-263+111-mar-11 PDF

    flyback xfmr 3.5 mh

    Contextual Info: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		irf730assihf730asirf730alsihf730al+4o-262o-26312-mar-07flyback xfmr 3.5 mh PDF

    IRF730A

    Abstract: SiHF730A-E3 SiHF730A flyback xfmr 3.5 mh
    Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irf730asihf730ao-22018-jul-08+2sihf730a-e3flyback xfmr 3.5 mh PDF

    Contextual Info: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irf730sihf7302002/95/eco-220ab+22011/65/eujs709a PDF

    3271

    Abstract: 9571 AN609 IRF730S SiHF730S
    Contextual Info: IRF730S_RC, SiHF730S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irf730ssihf730san60912-mar-10+232719571 PDF

    Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irf730asihf730a2002/95/eco-220ab+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irf730sihf7302002/95/eco-220ab+22011/65/eujs709a PDF

    IRF730A

    Abstract: IRF730AL IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 flyback xfmr 3.5 mh
    Contextual Info: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		irf730assihf730asirf730alsihf730al+6o-263o-26218-jul-08irf730asihf730as-e3flyback xfmr 3.5 mh PDF

    Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		irf730asihf730a2002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    AN1001

    Abstract: IRF730A SiHF730A SiHF730A-E3
    Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)


    Original     		irf730asihf730aan1001o-220+218-jul-08sihf730a-e3 PDF

    IRF730AL

    Abstract: IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh
    Contextual Info: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration


    Original     		irf730assihf730asirf730alsihf730al+6o-262o-26318-jul-08sihf730as-e3sihfl014t-e3flyback xfmr 3.5 mh PDF

    Contextual Info: IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		irf730ssihf730s2002/95/eco-263+22011/65/eu12-mar-12 PDF

    IRF730

    Abstract: SiHF730 SiHF730-E3
    Contextual Info: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irf730sihf7302002/95/eco-220ab+211-mar-11sihf730-e3 PDF