SIHB18N60E Search Results
SIHB18N60E Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIHB18N60E-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 18A TO263 | Original | 151.28KB |
SIHB18N60E Price and Stock
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Vishay Siliconix SIHB18N60E-GE3MOSFET N-CH 600V 18A TO263 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHB18N60E-GE3 | Tube | 1,000 |
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Vishay Intertechnologies SIHB18N60E-GE3N-CHANNEL 600V - Tape and Reel (Alt: SIHB18N60E-GE3) |
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SIHB18N60E-GE3 | Reel | 22 Weeks | 1,000 |
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SIHB18N60E-GE3 | 965 |
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SIHB18N60E-GE3 | Reel | 1,000 |
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SIHB18N60E-GE3 | 23 Weeks | 50 |
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SIHB18N60E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHB18N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.176 92 Qgs (nC) 10 Qgd (nC) 18 |
Original |
SiHB18N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiHB18N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
Original |
SiHB18N60E AN609, 7006u 8346m 1570m 8207m 19-Mar-15 |