SIHB12N65E Search Results

SIHB12N65E Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIHB12N65E-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 12A D2PAK	Original	PDF		7

SIHB12N65E Price and Stock

Filter by Manufacturer

Select Manufacturer


Vishay Siliconix SIHB12N65E-GE3 MOSFET N-CH 650V 12A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHB12N65E-GE3	Tube	2,478		1	1 $3.62 10 $3.62 100 $1.65 1000 $1.25 10000 $1.18	Buy Now
Vishay Intertechnologies SIHB12N65E-GE3 - Tape and Reel (Alt: SIHB12N65E-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHB12N65E-GE3	Reel		19 Weeks	1,000	1 - 10 - 100 - 1000 $1.20 10000 $1.13	Buy Now
Mouser Electronics	SIHB12N65E-GE3		3,000			1 $3.62 10 $1.78 100 $1.66 1000 $1.25 10000 $1.18	Buy Now
Newark	SIHB12N65E-GE3	Bulk			1	1 $4.03 10 $2.24 100 $2.08 1000 $1.68 10000 $1.61	Buy Now
TTI	SIHB12N65E-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.24 10000 $1.17	Buy Now
TME	SIHB12N65E-GE3				1	1 $3.51 10 $2.37 100 $1.69 1000 $1.69 10000 $1.69	Get Quote

EBV Elektronik	SIHB12N65E-GE3			20 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SIHB12N65E-GE3				1,000	1 - 10 - 100 - 1000 $2.00 10000 $1.90	Buy Now

SIHB12N65E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SiHB12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16	Original	SiHB12N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHB12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Generation Two 700 VGS = 10 V Qg max. (nC) • Low Figure-of-Merit (FOM) Ron x Qg 0.392 • • • • • 70 Qgs (nC)	Original	SiHB12N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiHB12N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHB12N65E AN609, 9430m 6635m 1327m 2651u 02-Apr-13	PDF
Contextual Info: SiHB12N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 700 VGS = 10 V Qg max. (nC) • • • • • 0.38 70 Qgs (nC) 9 Qgd (nC) 16 Configuration	Original	SiHB12N65E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF