SIE804DF Search Results

64713

Contextual Info: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using

64713

Contextual Info: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using

Contextual Info: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using

5193

Abstract: AN609
Contextual Info: SiE804DF_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

64713

Contextual Info: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using

Contextual Info: SPICE Device Model SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: New Product SiE804DF Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.038 at VGS = 10 V 37 0.040 at VGS = 6 V 36 VDS (V) 150 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • Ultra Low Thermal Resistance Using

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs Pola rPA K M O S F ET s features • Leadframe and plastic encapsulation construction - Provides better die protection and reliability - Easier manufacturing handling - Fixed footprint and pad layout independent of die size, ≤ 100 V

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

R312

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC I INNOVAT O L OGY PolarPAK N HN POWER MOSFETs O 19 62-2012 PolarPAK® Brings Standard Packaging to Double-Sided Cooling FEATURES • Leadframe and plastic encapsulation construction

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs