SIA914ADJ Search Results

Contextual Info: SPICE Device Model SiA914ADJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SiA914ADJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)a 4.5 4.5 4.5 4.5 RDS(on) () Max. 0.043 at VGS = 4.5 V 0.045 at VGS = 3.7 V 0.050 at VGS = 2.5 V 0.063 at VGS = 1.8 V • TrenchFET Power MOSFET

Contextual Info: SiA914ADJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 ID (A)a 4.5 4.5 4.5 4.5 RDS(on) () Max. 0.043 at VGS = 4.5 V 0.045 at VGS = 3.7 V 0.050 at VGS = 2.5 V 0.063 at VGS = 1.8 V • TrenchFET Power MOSFET

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance: