SIA466EDJ Search Results
SIA466EDJ Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SIA466EDJ-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 25A SC-70-6 | Original | 260.83KB |
SIA466EDJ Price and Stock
Vishay Siliconix SIA466EDJ-T1-GE3MOSFET N-CH 20V 25A PPAK SC70-6 |
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SIA466EDJ-T1-GE3 | Cut Tape | 7,384 | 1 |
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Vishay Intertechnologies SIA466EDJ-T1-GE3N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA466EDJ-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA466EDJ-T1-GE3 | Reel | 12 Weeks | 3,000 |
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SIA466EDJ-T1-GE3 | 54,456 |
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SIA466EDJ-T1-GE3 | 2,980 | 142 |
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SIA466EDJ-T1-GE3 | Cut Strips | 2,517 | 12 Weeks | 1 |
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SIA466EDJ-T1-GE3 | Reel | 3,000 |
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SIA466EDJ-T1-GE3 | 52,436 | 8 |
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SIA466EDJ-T1-GE3 | 43,752 |
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SIA466EDJ-T1-GE3 | Reel | 6,000 | 3,000 |
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SIA466EDJ-T1-GE3 | 3,000 |
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SIA466EDJ-T1-GE3 | Cut Tape | 2,980 | 0 Weeks, 1 Days | 5 |
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SIA466EDJ-T1-GE3 | 13 Weeks | 3,000 |
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Vishay Intertechnologies SIA466EDJ-T1-GE3 (TRENCHFET)Mosfet, N-Ch, 20V, 25A, 150Deg C, 19.2W Rohs Compliant: Yes |Vishay SIA466EDJ-T1-GE3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA466EDJ-T1-GE3 (TRENCHFET) | Cut Tape | 3,000 | 1 |
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Vishay BLH SIA466EDJ-T1-GE3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIA466EDJ-T1-GE3 | 2,255 | 7 |
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SIA466EDJ Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SiA466EDJ www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SiA466EDJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiA466EDJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiA466EDJ AN609, 7780u 9753u 0133m 8929u 8577m 9534m 03-Mar-14 | |
Contextual Info: SiA466EDJ www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.0095 at VGS = 10 V 25 0.0111 at VGS = 6 V 25 0.0130 at VGS = 4.5 V 25 VDS (V) 20 Qg (TYP.) 6.3 nC S 4 05 2. m m m 3 G Bottom View 5m |
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SiA466EDJ SC-70 SC-70-6L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Product Group: Vishay Siliconix, MOSFETs / February 2015 Author: Kim Norton Tel: 1 408-970-5300 E-mail: kim.norton@vishay.com 20 V N-Channel MOSFET With Industry-High 25 A Continuous Drain Current and 2500 V ESD Protection in 2 mm by 2 mm Footprint Area Product Benefits: |
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SC-70 SiA466EDJ |