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SIA449DJ Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIA449DJ-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 12A SC70-6	Original	PDF		9

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Vishay Intertechnologies SIA449DJ-T1-GE3 Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -12A; Idm: -30A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIA449DJ-T1-GE3				1	1 $0.82 10 $0.55 100 $0.33 1000 $0.22 10000 $0.21	Get Quote
Avnet Americas	SIA449DJ-T1-GE3	Tape & Reel		52 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now
Mouser Electronics	SIA449DJ-T1-GE3					1 $0.99 10 $0.70 100 $0.44 1000 $0.26 10000 $0.23	Get Quote
Newark ()	SIA449DJ-T1-GE3	Tape & Reel			100	1 - 10 - 100 $0.34 1000 $0.25 10000 $0.20	Buy Now
	SIA449DJ-T1-GE3	Cut Tape			1	1 $0.84 10 $0.38 100 $0.34 1000 $0.25 10000 $0.20	Buy Now
	SIA449DJ-T1-GE3	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.24	Buy Now
TTI	SIA449DJ-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.23	Buy Now

Bristol Electronics	SIA449DJ-T1-GE3		1,965			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIA449DJ-T1-GE3			53 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIA449DJ-T1-GE3 (8141213P) SIA449DJ-T1-GE3 P-CHANNEL MOSFET TRANSISTOR, 10.4 A, 30 V, 6-PIN SC-70
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIA449DJ-T1-GE3 (8141213P)	Bulk			20	1 - 10 - 100 $0.77 1000 $0.74 10000 $0.74	Get Quote

SIA449DJ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiA449DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.020 at VGS = - 10 V - 12a 0.024 at VGS = - 4.5 V - 12a 0.038 at VGS = - 2.5 V a Qg (Typ.) 23.1 nC - 12 PowerPAK SC-70-6L-Single	Original	sia449dj sc-70-6l-single sc-70 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
sia449 Contextual Info: SPICE Device Model SiA449DJ www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sia449dj 2002/95/ec 2011/65/eu js709a +202-oct-12 sia449	PDF
Contextual Info: SiA449DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.020 at VGS = - 10 V - 12a 0.024 at VGS = - 4.5 V - 12a 0.038 at VGS = - 2.5 V a Qg (Typ.) 23.1 nC - 12 PowerPAK SC-70-6L-Single APPLICATIONS	Original	sia449dj sc-70-6l-single sc-70 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
SiA449DJ Abstract: SIA449DJ-T1 Contextual Info: New Product SiA449DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.020 at VGS = - 10 V - 12a 0.024 at VGS = - 4.5 V - 12a 0.038 at VGS = - 2.5 V a Qg (Typ.) 23.1 nC - 12 PowerPAK SC-70-6L-Single	Original	sia449dj sc-70-6l-single sc-70 2011/65/eu +32002/95/ec 12-mar-12 sia449dj-t1	PDF
SiA427DJ Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:	Original	sc-70 com/mosfets/powerpak-sc-70-package/vmn-pt0131-1209 sia427dj +6sia450dj sia447dj sia413dj sia413 sia445edj sia915dj	PDF
Si7141 Abstract: SiA447DJ SI7615A Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	sc-75 sc-70 vmn-pt0197-1209 si7141 +2sia447dj si7615a	PDF