SI7973DP Search Results

Contextual Info: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated

Si7973DP

Contextual Info: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated

Contextual Info: Si7973DP Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.015 @ VGS = −4.5 V −12.8 0.019 @ VGS = −2.5 V −11.4 0.024 @ VGS = −1.8 V −10.1 D TrenchFETr Power MOSFET: 1.8-V Rated

73708

Abstract: AN609 Si7973DP
Contextual Info: Si7973DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si7973DP

Contextual Info: SPICE Device Model Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7973DP

Contextual Info: Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 12.8 0.019 at VGS = - 2.5 V - 11.4 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available

Contextual Info: Si7973DP Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 12.8 0.019 at VGS = - 2.5 V - 11.4 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available