40431
Abstract: Si7970DP
Contextual Info: Si7970DP Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.019 @ VGS = 10 V 10.2 0.026 @ VGS = 4.5 V 8.7 D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Dual MOSFET for Space Savings
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AN609
Abstract: Si7970DP 74677
Contextual Info: Si7970DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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V2323
Abstract: Si7970DP A2426
Contextual Info: SPICE Device Model Si7970DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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40431
Abstract: Si7970DP
Contextual Info: Si7970DP Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.019 @ VGS = 10 V 10.2 0.026 @ VGS = 4.5 V 8.7 D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Dual MOSFET for Space Savings
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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sip41109sip41110sip4111175/2a+10q406 transistorsi9120equivalent q406q406sum65n20-30si3456bdv spice device modelsud*50n025si4304dy0038 tsopsi2325ds
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