SI7858BDP Search Results
SI7858BDP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI7858BDP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 12V 40A 8SOIC | Original | 9 |
SI7858BDP Price and Stock
Vishay Intertechnologies SI7858BDP-T1-GE3Trans MOSFET N-CH 12V 40A 8-Pin PowerPAK SO EP T/R |
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SI7858BDP-T1-GE3 | 53 | 9 |
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SI7858BDP-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SI7858BDP-T1-GE3 | Cut Strips | 53 | 52 Weeks | 1 |
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| SI7858BDP-T1-GE3 | Tape & Reel | 1,485 | 100 |
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| SI7858BDP-T1-GE3 | Tape & Reel | 3,000 |
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SI7858BDP-T1-GE3 | Reel | 3,000 |
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SI7858BDP-T1-GE3 | 159 | 1 |
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SI7858BDP-T1-GE3 | 54 Weeks | 3,000 |
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SI7858BDP-T1-GE3 | 53 Weeks | 3,000 |
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SI7858BDP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
40869Contextual Info: Si7858BDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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si7858bdpan6090905m9094m+6 | |
Si7858ADP
Abstract: Si7858BDP Si7858ADP-T1 Si7858ADP-T1-GE3 n-Channel 12-V D-S MOSFET SI7858BDP-T1-GE3
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si7858bdpsi7858adpsi7858bdp-t1-ge3si7858adp-t1-ge3+3 | |
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Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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si7858bdp2002/95/ecsi7858bdp-t1-ge32011/65/eu+1 | |
Si7858BDP
Abstract: SI7858BDP-T1-GE3
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si7858bdp2002/95/ecsi7858bdp-t1-ge318-jul-08 | |
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Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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si7858bdp2002/95/ecsi7858bdp-t1-ge32011/65/eu+2 | |
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Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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si7858bdp2002/95/ecsi7858bdp-t1-ge32011/65/eu+2 | |
Si7858BDPContextual Info: SPICE Device Model Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si7858bdp18-jul-08 | |
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Contextual Info: SPICE Device Model Si7858BDP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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si7858bdp2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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si7858bdp2002/95/ecsi7858bdp-t1-ge32011/65/eu+1 | |
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Contextual Info: New Product Si7858BDP Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.0025 at VGS = 4.5 V 40 12 0.0030 at VGS = 2.5 V 40 0.0037 at VGS = 1.8 V 40 Qg (Typ.) 56 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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si7858bdp2002/95/ecsi7858bdp-t1-ge311-mar-11 | |
AC Transformer 50A 100V inductanceContextual Info: LT3759 Wide Input Voltage Range Boost/SEPIC/Inverting Controller DESCRIPTION FEATURES n n n n n n n n n n Wide VIN Range: 1.6V to 42V Positive or Negative Output Voltage Programming with a Single Feedback Pin PGOOD Output Voltage Status Report Accurate 50mV SENSE Threshold Voltage |
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lt3759100khzdfn-10msop-10e+1 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
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Contextual Info: LT3759 Wide Input Voltage Range Boost/SEPIC/Inverting Controller DESCRIPTION FEATURES Wide VIN Range: 1.6V to 42V n Positive or Negative Output Voltage Programming with a Single Feedback Pin n PGOOD Output Voltage Status Report n Accurate 50mV SENSE Threshold Voltage |
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100khzlt3759dfn-10msop-10e | |
si414
Abstract: lt3759 Si414DJ
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lt3759100khzdfn-10msop-10e+6 | |
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Contextual Info: LT3759 Wide Input Voltage Range Boost/SEPIC/Inverting Controller DESCRIPTION FEATURES n n n n n n n n n n Wide VIN Range: 1.6V to 42V Positive or Negative Output Voltage Programming with a Single Feedback Pin PGOOD Output Voltage Status Report Accurate 50mV SENSE Threshold Voltage |
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lt3759100khzop-10elt3957+4 | |