SI7684DP Search Results

Contextual Info: Si7684DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 20 0.011 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 11 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • High-Side DC/DC Conversion - Notebook D

AN609

Contextual Info: Si7684DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si7684DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.0090 @ VGS = 10 V 20 0.011 @ VGS = 4.5 V 20 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) APPLICATIONS 11 nC

Contextual Info: SPICE Device Model Si7684DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

si7684

Contextual Info: Si7684DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.0090 @ VGS = 10 V 20 0.011 @ VGS = 4.5 V 20 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) APPLICATIONS 11 nC

Si7684DP-T1-E3

Contextual Info: Si7684DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 20 0.011 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 11 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • High-Side DC/DC Conversion - Notebook D

Contextual Info: Si7684DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 20 0.011 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 11 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • High-Side DC/DC Conversion - Notebook D

Contextual Info: Si7684DP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.0090 @ VGS = 10 V 20 0.011 @ VGS = 4.5 V 20 D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant Qg (Typ) APPLICATIONS 11 nC

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no