Si7662
Contextual Info: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested
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Si7662
Abstract: Si7662DP
Contextual Info: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested
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Si7662
Abstract: AN609
Contextual Info: Si7662DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Abstract: Si7662DP
Contextual Info: SPICE Device Model Si7662DP Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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