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    transistor 7815

    Abstract: 7815 DATASHEET 7815 AN609
    Contextual Info: Si7614DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si7614DN AN609 22-Mar-07 transistor 7815 7815 DATASHEET 7815 PDF

    74204

    Abstract: Si7614DN si7614
    Contextual Info: SPICE Device Model Si7614DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si7614DN 18-Jul-08 74204 si7614 PDF