SI7495DP Search Results

Si7495DP

Contextual Info: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V

Si7495DP

Contextual Info: SPICE Device Model Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7495DP New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V

Contextual Info: Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 - 12 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si7495DP

Contextual Info: Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 - 12 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.0065 @ VGS = - 4.5 V - 21 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.008 @ VGS = - 2.5 V

Si7495DP

Contextual Info: SPICE Device Model Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7495DP

Contextual Info: SPICE Device Model Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 - 12 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

transistor 9529

Abstract: AN609 Si7495DP
Contextual Info: Si7495DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.00655 at VGS = – 4.5 V – 21 0.008 at VGS = – 2.5 V – 19 0.011 at VGS = – 1.8V – 16 – 12 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Si7495DP

Abstract: rthjc
Contextual Info: Si7495DP Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®

Contextual Info: Si7495DP Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.0065 at VGS = - 4.5 V - 21 0.008 at VGS = - 2.5 V - 19 0.011 at VGS = - 1.8V - 16 - 12 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

ltcfc

Abstract: LTC4416 transistor marking r2c LTC4416-1 LTC4416EMS SOT23 transistor R2C ltcps marking g1 zener+diode+sr+4416
Contextual Info: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Designed Specifically to Drive Large and Small QG PFETs Very Low Loss Replacement for Power Supply OR’ing Diodes

ltcfc

Abstract: LTC4416
Contextual Info: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Designed Specifically to Drive Large and Small QG PFETs Very Low Loss Replacement for Power Supply OR’ing Diodes

ltcfc

Abstract: LTC4416 LTC4416-1 Marking R2E r2c transistor R2C marking R2E SOT23 LTC4416EMS LTC4416IMS marking r2c
Contextual Info: LTC4416/LTC4416-1 36V, Low Loss Dual PowerPath Controllers for Large PFETs DESCRIPTIO FEATURES U Designed Specifically to Drive Large and Small QG PFETs • Very Low Loss Replacement for Power Supply OR’ing Diodes ■ Wide Operating Voltage Range: 3.6V to 36V

MTBF fit IGBT 1200

Abstract: LTC4416
Contextual Info: Application Notes SPECIFICATION CHECKLIST Use this checklist to help you define your specification. If you can’t find a converter that fulfils your needs then call us, fax us, e-mail us or use our Web Sample Enquiry link and we will find the best match for you.